Video: No. 9 Notre Dame Avoided The Upset Against Virginia On A Stunning Last-Second TD

first_imgWill Fuler sprints past Virginia defender on his way to the end zone.Will FulerNo. 9 Notre Dame used some luck of the Irish to pull out a 34-27 victory over Virginia on the road. With starting quarterback Malik Zaire out of the game with what appeared to be a serious ankle injury, and his team trailing 27-26, back-up QB DeShone Kizer took the team downfield in the final minutes, tossing the game winning touchdown to wide receiver Will Fuller with 12 seconds remaining. Fuller’s game-winning score stunned the upset-minded Cavalier faithful.  pic.twitter.com/o92NxfHftl— Luke Zimmermann (@lukezim) September 12, 2015Wow. What a gut-wrenching loss for Mike London and the Cavs, and what an escape for Brian Kelly and the Fighting Irish.last_img read more

Sequential infiltration synthesis SIS significantly improves EUV patterning

first_img Provided by IMEC Imec pushes the limits of EUV lithography single exposure TEM image of the photoresist pattern after lithography exposure (left) and TEM EDX signal from Aluminum for the photoresist pattern after the SIS step (right). Credit: IMEC Explore further This document is subject to copyright. Apart from any fair dealing for the purpose of private study or research, no part may be reproduced without the written permission. The content is provided for information purposes only.center_img SIS is an existing technique, used in directed self-assembly (DSA) and now applied in EUV lithography, in which the photoresist is infiltrated with an inorganic element to make it harder and more robust, thereby enhancing the patterning performance on different parameters. Imec and partners show the first comparison between an EUVL-SIS and a standard EUVL patterning process demonstrating the benefits of SIS regarding roughness, nano-failure mitigation and local variability. When adding an SIS step during a full pattern transfer in a TiN layer, imec observed a improvement of 60 percent for intrafield local critical dimension uniformity (LCDU) and 10 percent for line edge roughness compared to a reference process. These patterning enhancements are inherent properties of SIS. Also, the number of nanobreaks – a typical stochastic nano-failure – is reduced by at least one order of magnitude. Results were confirmed in an industrial relevant use case, showing reduced defectivity in a logic chip with a 20 percent smaller tip-to-tip critical dimension at a similar LCDU as a standard EUVL process.The improvement SIS showcases on all parameters is indebted to imec’s EUV lithography and metrology infrastructure and recent advancements in the field of process control, material and etch research. The current work brings these results and competences together in one paper, establishing SIS as a significant EUV patterning enhancement technique. The progress on each of the integrated aspects and SIS will be presented on the SPIE Advanced Lithography conference in multiple papers.The work was performed in collaboration with ASM and ASML.”The recent achievements with SIS for EUV lithography were enabled by the progress imec and its partners have made in various domains such as materials science, deposition, imaging, and metrology. This is a great example of how the integration of knowledge and combined efforts from multiple domains and ecosystem partners will enable a path to scale to N3 and beyond,” said Greg McIntyre, director of advanced patterning at imec. his week, at the SPIE Advanced Lithography conference 2019, imec, a world-leading research and innovation hub in nanoelectronics and digital technologies, demonstrates the positive impact of sequential infiltration synthesis (SIS) on the EUVL (extreme ultra-violet lithography) patterning process. This post-lithography technique is shown to significantly reduce stochastic nano-failures and line roughness, contributing to the introduction of EUVL patterning of future nodes”. This work integrates recent advancements on metrology and etch, and on material developments, which will be presented in multiple papers at this week’s 2019 SPIE Advanced Lithography Conference. Citation: Sequential infiltration synthesis (SIS) significantly improves EUV patterning (2019, February 25) retrieved 17 July 2019 from https://phys.org/news/2019-02-sequential-infiltration-synthesis-sis-significantly.htmllast_img read more

Lok Sabha elections 2019 EC bans all political ads on poll dayLok

first_imgElection Commission of India The Election Commission has banned all political advertisements in newspapers on poll day and preceding day of the polling unless it is pre-certified from the concerned authorities at state or district level.According to a press release from the office of the Chief Electoral Officer of Assam on Sunday, no political party or candidate shall publish any advertisement in print media on poll day or one day prior to the poll day in all the phases.However, the advertisements can be published if these are are pre-certified from the Media Certification and Monitoring Committee (MCMC) at the state or district level, it added.Assam context“In the context of Assam, the restricted days of advertisement are 10th and 11th April for Phase-I, 17th and 18th April for Phase-II, 22nd and 23rd April for Phase-III,” the release said.The ECI has directed that in order to facilitate publication of the newspaper advertisements, MCMC at state and district level must examine and pre-certify all such advertisements received from the political parties, candidates and others, it added.The three-phase voting for 14 seats in Assam will take place on April 11, 18 and 23, while the counting of votes will be on May 23 after completion of the entire seven-phase voting across the country. SHARE SHARE EMAIL Assam COMMENT Published on April 07, 2019 SHARE The Election Commission of India in New Delhi.   –  THE HINDU national elections advertising However, ads can be published if it is pre-certified from the Media Certification and Monitoring panel COMMENTSlast_img read more